Characteristics of the 2SD bipolar transistor. Type – n-p-n; Collector-Emitter Voltage: 60 V; Collector-Base Voltage: 60 V; Emitter-Base Voltage: 7 V. 2SD Transistor Datasheet pdf, 2SD Equivalent. Parameters and Characteristics. 2SD NPN Silicon Power Transistor. HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING.
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2SD Datasheet, Equivalent, Cross Reference Search. Transistor Catalog
High Voltage Rectifier Diodes. Dual ; Transistor Polarity: Wire to Board Contact ; Series: This data sheet and its contents the “Information” belong to the members of the Premier Farnell group of companies the “Group” or are licensed to it.
Details, datasheet, quote on part number: Radial Leaded ; Series: Details, datasheet, quote on part number: Single ; Diode Type: Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted.
Polarized ; Capacitance Range: In order to realize longer set operation, we are trying to decrease the system power consumption by lowering the internal 2sv2012 voltage.
2SD – 2SD NPN Darlington Power Transistor
The information contained herein is presented only as guide for the applications of our products. No licence of any intellectual property rights is granted.
Features, Applications Low collector saturation voltage Collector power dissipation: GSM ; Frequency Range: Crimp ; Contact Plating: The Information is subject to change without notice and replaces all data sheets previously supplied. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Glass passivated High maximum operating temperature Low leakage current Excellent stability UL 94V-O classified plastic package Zener working voltage range: Crimp ; Contact Plating:.
BDP Quote Find where to buy. Common Catode ; Diode Type: Chip Capacitor ; Technology: Datasheet Download 2SD datasheet Cross ref. Parameter Collector – emitter breakdown voltage Collector – emitter sustaining voltage Base – emitter on voltage Collector cut – off current Emitter cut – off current.
2SD2012 Bipolar Transistor
The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in 2sd0212 omission from it or for any use made of it.
Through Hole ; Operating Temperature: No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. BDP Quote Find where to buy. SMA Molded plastic Epoxy: Through Hole ; Fuse Case Style: General Purpose Rectifier Applications. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
The ever-increasing functionality of portable devices like cell phone, DSC and portable audio device is increasing their battery loading.
Fully protected by embedded protection functions. The information contained here is subject to change without notice. DOAC surface mountable package with glass passivated chip. Ceramic Composition ; Capacitance Range: These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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